2SD23210RA

2SD23210RA

  • Description:TRANS NPN 20V 5A NS-B1
  • Series:-

SKU:f11586174fa6 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 20V 5A NS-B1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 100mA, 3A
  • Current - Collector Cutoff (Max):1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:340 @ 500mA, 2V
  • Power - Max:400 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SIP
  • Supplier Device Package:NS-B1
  • Grade:-
  • Qualification:-

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2SD23210RA

Overview

The Panasonic 2SD2321 is a silicon NPN epitaxial planar transistor designed for low-frequency power amplification. It operates within a collector-emitter voltage of 20 V and supports a continuous collector current of 5 A, with a peak rating of 8 A. The device features a transition frequency of 150 MHz and a maximum collector power dissipation of 400 mW at 25°C ambient temperature. It utilizes an NS-B1 package and complies with the RoHS Directive.

Feature Summary

  • Low collector-emitter saturation voltage for efficient operation
  • Satisfactory performance with low-voltage power supplies

Applications

  • Low-frequency power amplification circuits
  • General electronic equipment
  • Household appliances

Procurement Notes

Verify the exact lifecycle status on the manufacturer's official website before procurement, as the datasheet indicates maintenance or discontinuation phases. Confirm that the specific order quantity matches the standard packaging requirements. Ensure the component meets the intended application standards, as it is designated for general-purpose use rather than specialized automotive or medical environments.

Selection Notes

Select this component when low-frequency power amplification is required with a low-voltage supply. The device offers high forward current transfer ratios suitable for driving loads up to 5 A. Designers must account for the 400 mW power dissipation limit and ensure adequate thermal management to maintain junction temperatures within the specified safe operating area.

Part Context

This component belongs to the Panasonic discrete semiconductor transistor category. It is specifically engineered as an NPN type for applications requiring reliable switching and amplification in consumer electronics and industrial control systems where standard reliability metrics are sufficient.

Replacement Considerations

Consult the manufacturer's official replacement guide for verified substitutes. Cross-reference pinouts and electrical ratings carefully if considering alternative manufacturers.

2SD23210RA2SD23210RA

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