2SD2345JSL

Single Bipolar Transistors Overview

The Panasonic 2SD2345J is a silicon NPN epitaxial planar transistor designed for low-frequency amplification. It operates with a collector-emitter voltage of 40 V and a collector current of 50 mA, housed in an SSMini3-F1 package. The device features a high forward current transfer ratio (hFE) ranging from 600 to 2000 depending on the rank, and a low collector-emitter saturation voltage of 0.05 V to 0.2 V at specified conditions. Transition frequency reaches 120 MHz, while junction temperature supports up to 125 °C.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio (hFE)
• Low collector-emitter saturation voltage
• High emitter-base voltage rating
• Low noise voltage characteristics

Single Bipolar Transistors Applications

• Low-frequency amplification circuits
• General electronic equipment
• Office equipment
• Communications equipment

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (S or T) required for the application against the datasheet specifications. Confirm that the SSMini3-F1 package dimensions align with the target PCB layout. Ensure compliance with RoHS directives if applicable to the manufacturing process. Check the official Panasonic semiconductor lifecycle status page for any maintenance or discontinuation updates before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a small-form-factor NPN transistor with high gain and low saturation voltage is needed for low-frequency applications. The wide hFE range accommodates various circuit requirements without needing tight binning. Consider the 125 mW power dissipation limit and thermal management needs relative to the ambient operating temperature range of -55 to +125 °C.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD series of silicon NPN transistors. It utilizes an epitaxial planar structure optimized for general-purpose amplification tasks. The device is manufactured by Panasonic Electronic Components and complies with relevant environmental directives. It serves as a standard discrete semiconductor solution for consumer and industrial electronics requiring reliable signal processing.

Single Bipolar Transistors Replacement Considerations

Consult the official Panasonic replacement guide for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, electrical ratings, and package dimensions.

Single Bipolar Transistors FAQ

What are the available hFE ranks for the 2SD2345J?

The device is classified into two hFE ranks: Rank S (600 to 1200) and Rank T (1000 to 2000).

What is the maximum collector power dissipation?

The maximum collector power dissipation is 125 mW at an ambient temperature of 25 °C.

What package type does the 2SD2345J use?

It uses the EIAJ SC-89 SSMini3-F1 surface-mount package.