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2SD2351T106V is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 50V 0.15A UMT3. Review the specifications below when checking this part for your BOM.
The 2SD2351T106V is a silicon NPN general-purpose bipolar junction transistor manufactured by ROHM Semiconductor. It operates with a collector-emitter voltage of 50 V and supports a continuous collector current of 150 mA. The device features a high DC current gain ranging from 820 to 2700 at 1 mA, alongside a transition frequency of 250 MHz. It utilizes an SOT-323 (UMT3) surface-mount package and dissipates up to 200 mW of power.
Verify the specific ordering suffix T106 against the official datasheet to confirm the packaging format and marking code. Ensure that the procurement documentation explicitly references the ROHM Semiconductor part number 2SD2351T106V to avoid substitution errors with similar variants in the same series.
Select this component when designing low-frequency amplifiers requiring high current gain within a compact footprint. The device is suitable for applications demanding low saturation voltage and elevated emitter-base voltage tolerance. Confirm that the operating conditions remain within the specified absolute maximum ratings for thermal and electrical limits.
This component belongs to the 2SD2351 series of general-purpose transistors designed for standard electronic equipment. It is engineered for use in audio, video, and office automation devices where small form factors are required. The product line emphasizes energy efficiency and reliability for consumer electronics applications.
Consult the manufacturer's datasheet for officially confirmed substitute part numbers before implementation. Do not assume functional equivalence based on generic specifications alone.
The maximum collector-base breakdown voltage (BV_CBO) is 60 V.
The typical output capacitance (C_ob) is 3.5 pF under specified test conditions.
No, it is designed for low-frequency amplification with a maximum power dissipation of 200 mW.
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