2SD2351T106W

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SD2351T106W is a general-purpose NPN bipolar junction transistor housed in an SOT-323 (UMT3) surface-mount package. It features a collector-emitter voltage of 50 V and a continuous collector current rating of 150 mA. The device provides a high DC current gain ranging from 820 to 2700 at 1 mA, with a transition frequency of 250 MHz. Power dissipation is rated at 200 mW, and the maximum operating junction temperature reaches 150 °C.

Single Bipolar Transistors Feature Summary

• High DC current gain for efficient signal amplification
• Low saturation voltage to minimize power loss during conduction
• High emitter-base breakdown voltage for improved circuit robustness

Single Bipolar Transistors Applications

• Low frequency amplifier circuits
• General purpose switching applications
• Audio signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific hFE ranking required for your design, as the component is classified into distinct gain bands. Confirm that the UMT3 footprint matches your PCB layout constraints. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly to prevent damage to the sensitive semiconductor junction.

Single Bipolar Transistors Selection Notes

Select this component when a compact surface-mount solution is required for low-frequency amplification tasks. The high current gain reduces base drive requirements, simplifying driver circuit design. Verify that the 150 mA collector current limit accommodates peak load conditions without exceeding the 200 mW power dissipation threshold under expected ambient temperatures.

Single Bipolar Transistors Part Context

This part belongs to the 2SD2351 series of general-purpose transistors manufactured by ROHM Semiconductor. The series focuses on providing high reliability and energy efficiency in small form factors. The T106 suffix indicates the specific taping code and reel configuration used for automated surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

BC847AW RFG

Single Bipolar Transistors FAQ

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (BV_CBO) is 60 V.

How is the DC current gain classified?

The DC current gain (hFE) is classified into two ranks: 820 to 1800 and 1200 to 2700, measured at V_CE = 5 V and I_C = 1 mA.

What is the typical output capacitance?

The typical output capacitance (C_ob) is 3.5 pF, measured at V_CB = 5 V and f = 1 MHz.