2SD2351U3T106W

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SD2351U3T106W is a single NPN bipolar junction transistor (BJT) housed in an SMD UMT-3 package. It features a collector-emitter voltage of 50 V, a collector-base voltage of 60 V, and an emitter-base voltage of 12 V. The device supports a continuous collector current of 150 mA with a maximum power dissipation of 200 mW. Key electrical parameters include a transition frequency of 250 MHz, a collector-emitter saturation voltage of 300 mV, and a DC current gain ranging from 820 to 2700. Operating temperatures span from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain for efficient signal amplification
• Integrated muting function suitable for audio applications
• Compact surface-mount design for space-constrained layouts

Single Bipolar Transistors Applications

• Audio muting circuits
• General-purpose amplification
• Switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official ROHM documentation to confirm pinout and electrical tolerances. Ensure the ordering code matches the required packaging format. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and integrated muting capabilities are required in a small form factor. Evaluate thermal management requirements given the 200 mW power dissipation limit. Confirm that the 50 V collector-emitter rating aligns with the target circuit's voltage levels.

Single Bipolar Transistors Part Context

This part belongs to the 2SD2351 series of high hFE transistors designed by ROHM Semiconductor. It utilizes silicon technology and is intended for surface-mount assembly. The device is positioned as a specialized solution for applications requiring both amplification and muting functions within a minimal footprint.

Single Bipolar Transistors Replacement Considerations

Consult official ROHM substitution guides for verified alternatives. Generic equivalents may not replicate the specific high hFE range or muting characteristics.