2SD2390

Overview

The Sanken Electric 2SD2390 is a Silicon NPN Triple Diffused Planar Transistor designed for audio, series regulator, and general-purpose applications. It features a Darlington configuration with a minimum DC current gain (hFE) of 5000. Absolute maximum ratings include a collector-emitter voltage (VCEO) of 150 V, collector-base voltage (VCBO) of 160 V, emitter-base voltage (VEBO) of 5 V, and continuous collector current (IC) of 10 A. The device supports a maximum collector power dissipation of 100 W at 25°C case temperature. Electrical characteristics specify a saturation voltage (VCE(sat)) of 2.5 V max at IC=7A/IB=7mA, and a transition frequency (fT) of 55 MHz typical.

Feature Summary

• Triple diffused planar construction provides high reliability and robust performance in power switching environments.
• Darlington internal structure delivers exceptionally high DC current gain, reducing base drive requirements.
• Complements the 2SB1560 PNP transistor for use in push-pull amplifier configurations.

Applications

• Audio amplifiers
• Series regulators
• General purpose switching

Procurement Notes

Verify the specific hFE rank suffix (O, P, or Y) required for your circuit design, as these denote distinct gain ranges. Confirm compliance with RoHS standards and lead-free specifications during sourcing. Ensure thermal management solutions align with the 100 W dissipation rating at specified case temperatures to maintain operational integrity within the -55 to +150 °C junction temperature range.

Selection Notes

Select this component when high current gain and moderate voltage handling are required in a single package. The MT-100 (TO-3P) package facilitates effective heat sinking for high-power dissipation scenarios. Consider the complementary 2SB1560 for balanced push-pull designs. Evaluate the saturation voltage and storage time characteristics against switching speed requirements for the intended application load.

Part Context

This device belongs to Sanken's line of silicon NPN triple diffused planar transistors. It is engineered specifically for power applications requiring high gain and stability. The TO-3P metal tab package allows direct mounting to heatsinks, distinguishing it from plastic-encased alternatives. Its design focuses on minimizing base drive current while maintaining high collector current capacity.

Replacement Considerations

The official complement is the 2SB1560 PNP transistor. Verify pinout compatibility and thermal resistance values when substituting with other TO-3P packages. Cross-reference electrical parameters such as VCEO and IC ratings to ensure equivalent performance in the target circuit.

FAQ

What are the available hFE gain ranks for the 2SD2390?

The device is available in three gain ranks: Rank O (5000 to 12000), Rank P (6500 to 20000), and Rank Y (15000 to 30000).

What is the maximum collector power dissipation rating?

The maximum collector power dissipation is 100 W when measured at a case temperature of 25°C.

Is this transistor suitable for high-frequency switching?

The transition frequency (fT) is typically 55 MHz, which supports general-purpose switching but may require evaluation against specific high-speed timing requirements like storage time.