2SD2406-Y(F)

Overview

The Toshiba Semiconductor and Storage 2SD2406-Y(F) is a silicon NPN triple diffused power transistor designed for amplifier applications. It features an 80 V collector-emitter breakdown voltage and supports a maximum continuous collector current of 4 A. The device delivers a high power dissipation rating of 25 W at a case temperature of 25°C. Electrical characteristics include a DC current gain (hFE) range of 120 to 240 for the Y classification, with a transition frequency of 8.0 MHz. The component utilizes a TO-3P package variant.

Feature Summary

• Triple diffused silicon NPN construction optimized for power amplifier circuits
• High power dissipation capability rated at 25 W under specified thermal conditions
• Defined hFE linearity across operating currents for signal fidelity

Applications

• Power amplifier circuits
• General electronics equipment
• Industrial robotics control systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm pinout compatibility and lead finish specifications. Confirm RoHS status directly with the supplier as compliance details vary by production lot. Ensure the procurement channel provides traceable manufacturing data to validate authenticity and storage history prior to installation.

Selection Notes

Select this component when designing circuits requiring high current handling and robust power dissipation in a through-hole configuration. Evaluate the thermal management requirements carefully, as the 25 W rating depends on maintaining the case temperature at 25°C. Compare the 80 V breakdown voltage against peak circuit voltages to ensure adequate safety margins during operation.

Part Context

This part belongs to the 2SD2406 series of power transistors manufactured by Toshiba Semiconductor and Storage. The series is characterized by its triple diffused process technology, which enhances reliability and performance in high-power switching and amplification tasks compared to standard diffusion methods.

Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements must match the 80 V/4 A ratings and TO-3P mechanical footprint. Verify that alternative components meet the same hFE classification and saturation voltage requirements.