2SD2425-T1-AZ

Description：TRANSISTOR
Series：-

SKU:ef2eae40ada4 Category: Single Bipolar Transistors Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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2SD2425-T1-AZ

Overview

The 2SD2425-T1-AZ is an NPN silicon epitaxial transistor manufactured by Renesas Electronics Corporation. Designed for low-frequency power amplifiers and mid-speed switching, it features high current capacity and low collector saturation voltage within a compact package. Key electrical parameters include a maximum collector-to-emitter voltage of 60 V, a continuous DC collector current rating of 5.0 A, and a total power dissipation of 2.0 W on a specified ceramic board. The device exhibits a minimum DC current gain (hFE) ranging from 50 to 100 depending on the operating point, with a typical junction temperature limit of 150 °C.

Feature Summary

High current handling capability suitable for demanding power applications
Low collector saturation voltage for improved efficiency
Compact package design bridging small signal and power signal dimensions

Applications

DC/DC converters
Motor drivers
Low-frequency power amplifiers

Procurement Notes

Verify the specific quality grade classification before integration, as recommended applications depend strictly on this designation. Confirm compliance with applicable export control laws and regulations prior to procurement. Ensure that all operational parameters remain within the absolute maximum ratings defined in the datasheet to prevent malfunction or damage. Consult a Renesas Electronics sales office for details regarding environmental compatibility and controlled substance regulations.

Selection Notes

Select this component when a balance between high current capacity and physical size is required. It serves as the complementary match to the 2SB1578 PNP transistor. Designers must account for the thermal constraints associated with its 2.0 W power dissipation rating, which relies on mounting to a 7.5 cm² x 0.7 mm ceramic board. Verify that the required hFE class aligns with the specific application's gain requirements.

Part Context

This device belongs to the Renesas discrete semiconductor transistor portfolio, specifically categorized under bipolar junction transistors. Originally developed by NEC Electronics Corporation, the product line was integrated into Renesas following the April 2010 merger. The component is classified under the "Standard" quality grade, indicating suitability for general industrial and consumer electronics rather than specialized life-support or aerospace systems.