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The Sanken 2SD2439 is a silicon NPN triple diffused planar transistor designed for audio, series regulator, and general-purpose applications. It features an absolute maximum collector current of 10 A and a collector-emitter voltage rating of 150 V. The device provides a minimum DC current gain (hFE) of 5000 at IC=7A and VCE=4V. Typical switching characteristics include a turn-on time of 0.5 ms and a storage time of 10.0 ms under specified drive conditions. It operates within a junction temperature range of -55 to +150 °C.
Verify the specific hFE binning rank required for your design, as the datasheet defines distinct ranges for ranks O, P, and Y. Confirm that the TO-3PF package dimensions align with your thermal management strategy, particularly regarding the mounting surface area required to achieve the rated 80 W dissipation at 25 °C case temperature.
Select this component when high current handling and substantial current gain are necessary in a single package. Ensure the application circuit provides adequate base drive current, as the saturation voltage specifications are defined at IB=7 mA. Consider the complementary 2SB1588 if a matched pair configuration is required for push-pull topologies.
This device belongs to Sanken's lineup of high-power NPN transistors utilizing triple diffused planar technology. It is engineered to serve as the NPN counterpart to the 2SB1588 PNP transistor, facilitating balanced design in complementary symmetry circuits commonly found in audio output stages and linear power supplies.
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