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The Panasonic 2SD2504 is a silicon NPN epitaxial planar transistor designed for low-frequency power amplification. It features a TO-92-B1 package with three terminals: emitter, collector, and base. Key electrical parameters include a maximum collector current of 5 A and a peak collector current of 9 A. The device supports a collector-emitter voltage of 10 V and a collector-base voltage of 15 V. Maximum collector power dissipation is rated at 750 mW at 25°C ambient temperature. The forward current transfer ratio ranges from 300 to 800 at IC = 0.5 A, with a transition frequency of 170 MHz.
Verify the specific lifecycle status before procurement, as the datasheet indicates potential maintenance or discontinuation stages. Confirm that the application aligns with standard general-purpose electronics rather than specialized safety-critical systems. Ensure compliance with RoHS directives if required by your manufacturing standards. Consult official channels for the most recent product specifications prior to final design implementation.
Select this component when designing low-frequency power amplifiers requiring high current handling within a compact TO-92-B1 footprint. Consider the 10 V collector-emitter voltage limit and 750 mW power dissipation constraints during thermal management planning. Verify that the operating conditions remain within the absolute maximum ratings to prevent device failure.
This component belongs to the category of discrete semiconductor transistors manufactured by Panasonic Electronic Components. It utilizes silicon technology with an epitaxial planar structure. The device is intended for general-purpose use in standard electronic equipment, distinguishing it from specialized automotive or aerospace-grade components.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer resources for cross-reference information.