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Product Detailed Parameters
- Description：TRANS NPN 25V 1.2A MPT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1.2 A
- Voltage - Collector Emitter Breakdown (Max)：25 V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 10mA, 500mA
- Current - Collector Cutoff (Max)：300nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：820 @ 500mA, 5V
- Power - Max：2 W
- Frequency - Transition：200MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：MPT3
- Grade：-
- Qualification：-
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Overview
The ROHM Semiconductor 2SD2537T100V is a single NPN silicon bipolar junction transistor housed in an SOT-89 (MPT3) surface-mount package. It features a collector-emitter voltage of 25 V, a collector current of 1.2 A, and a transition frequency of 200 MHz. The device offers a low saturation voltage of 300 mV at 500 mA and a high DC current gain ranging from 820 to 1800.
Feature Summary
- High DC current gain for efficient signal amplification
- Low collector-emitter saturation voltage for reduced power loss
- High emitter-base breakdown voltage for robust operation
Applications
- Low frequency amplifier circuits
Procurement Notes
Verify the exact ordering suffix against the manufacturer's latest datasheet before procurement. Confirm that the component meets RoHS compliance standards required by your manufacturing process. Ensure proper handling procedures are followed due to electrostatic sensitivity during storage and assembly.
Selection Notes
Select this component when a high-gain NPN transistor with moderate voltage ratings is required. Consider the MPT3 package size for space-constrained designs. Evaluate thermal management requirements based on the specified power dissipation limits under various mounting conditions.
Part Context
This part belongs to the 2SD2537 series of middle power transistors manufactured by ROHM Semiconductor. It is designed specifically for applications requiring reliable performance in low-frequency amplification tasks within standard electronic equipment.
Replacement Considerations
ZXTN2005ZTA is listed as a similar replacement option with identical pinout and package configuration.
FAQ
What is the maximum collector-emitter saturation voltage?
The maximum collector-emitter saturation voltage is 300 mV when measured at a collector current of 500 mA and a base current of 10 mA.
What is the DC current gain range for this transistor?
The DC current gain (hFE) ranges from a minimum of 820 to a maximum of 1800 when tested at a collector-emitter voltage of 5 V and a collector current of 500 mA.
