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The Sanken Electric 2SD2560 is a Silicon NPN Triple Diffused Planar Transistor designed as the complement to the 2SB1647 PNP type. It features a TO-3P (MT-100) package with absolute maximum ratings of 150V collector-emitter voltage, 15A continuous collector current, and 130W power dissipation at 25°C case temperature. The device exhibits a minimum DC current gain (hFE) of 5000 at IC=10A and a typical transition frequency (fT) of 70MHz.
Verify the specific hFE rank (O, P, or Y) required for your design, as gain varies significantly between subtypes. Confirm the MT-100/TO-3P mounting hole dimensions match your heatsink interface. Ensure thermal compound application accounts for the bare metal tab connection to the collector pin in this package style.
Select based on required current gain binning; Rank O provides 5000-12000 gain, while Rank Y offers 15000-30000. Consider the 130W dissipation limit which requires an adequate heatsink. Verify the complementary 2SB1647 availability if designing balanced stereo channels. Check safe operating area curves for pulsed vs. continuous load requirements.
This component belongs to Sanken's high-power Darlington transistor lineup, specifically engineered for audio and regulator applications. It serves as the NPN counterpart to the 2SB1647, enabling matched pairs for low-distortion audio output stages. The triple diffused planar technology ensures robust performance under high current conditions typical in consumer and professional audio equipment.
Direct functional substitutes include the MJ10005 and MJ10020 from ON Semiconductor, which are NPN silicon power darlington transistors. Verify that replacement devices meet the 150V VCEO and 15A IC requirements. Check if alternative packages require adapter plates or different mounting hardware compared to the standard TO-3P form factor.