2SD25730QA

2SD25730QA

  • Description:TRANS NPN 60V 3A MT-3-A1
  • Series:-

SKU:035c21ff3c73 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 60V 3A MT-3-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 2A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:800 @ 500mA, 4V
  • Power - Max:1.5 W
  • Frequency - Transition:50MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SIP
  • Supplier Device Package:MT-3-A1
  • Grade:-
  • Qualification:-

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2SD25730QA

Overview

The Panasonic 2SD2573QA is a silicon NPN triple diffusion planar type power transistor designed for high current and power amplification applications. It features a low collector-emitter saturation voltage and supports radial taping supply. The device has a maximum collector current of 3 A, a peak collector current of 6 A, and a collector-emitter voltage rating of 60 V. The minimum forward current transfer ratio (hFE) for the Q rank is 800 at IC = 0.5 A. It operates with a junction temperature up to 150 °C and complies with the RoHS Directive.

Feature Summary

  • Low collector-emitter saturation voltage
  • Radial taping supply capability

Applications

  • High current amplification
  • Power amplification
  • General electronic equipment

Procurement Notes

Verify the specific component status on the manufacturer's official website before procurement, as this product falls under maintenance or discontinued lifecycle stages. Confirm that the Q rank hFE classification meets the design requirements. Ensure compliance with export control regulations if applicable. Consult sales staff for special application suitability.

Selection Notes

Select the 2SD2573QA for circuits requiring high current handling and low saturation voltage. The Q rank provides an hFE range of 800 to 1,500. Consider the MT-3-A1 package for mounting. Verify thermal management capabilities against the 1.5 W dissipation limit without a heat sink. Ensure operating conditions remain within absolute maximum ratings.

Part Context

This component belongs to the Panasonic 2SD2573 series of silicon NPN transistors. It is manufactured using a triple diffusion planar process. The device is intended for standard applications such as office equipment, communications equipment, measuring instruments, and household appliances. It is not recommended for aerospace, automotive, or life support systems without prior consultation.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the forward current transfer ratio (hFE) range for the 2SD2573QA?

For the Q rank, the hFE ranges from 800 to 1,500 when measured at IC = 0.5 A and VCE = 4 V.

What is the maximum collector current rating?

The continuous collector current (IC) is rated at 3 A, with a peak collector current (ICP) of 6 A.

Is this component suitable for aerospace applications?

No, it is intended for general electronic equipment. Special applications like aerospace require exceptional quality and reliability, necessitating direct consultation with sales staff.

2SD25730QA2SD25730QA

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