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The 2SD2607FU6 is an NPN silicon epitaxial planar transistor manufactured by ROHM Semiconductor, designed for power amplification applications. It features a Darlington connection structure housed in a TO-220FN package with flange mounting capabilities. The device supports a maximum collector-emitter voltage of 100V and a continuous collector current of 8A. Key electrical characteristics include a minimum DC current gain (hFE) of 1000 at VCE=3V and IC=2A, and a transition frequency of 40MHz. The component integrates built-in resistors between the base and emitter alongside a damper diode.
Verify the specific suffix 'FU6' against official ROHM documentation to confirm packaging details such as tape-and-reel specifications or quantity per unit. Ensure the procurement channel provides valid traceability data. Confirm RoHS compliance status directly from the manufacturer's latest release notes before finalizing orders.
Select this component when high current gain and robust switching performance are required in power amplification stages. The integrated damper diode simplifies circuit design by eliminating external snubber requirements. Evaluate thermal management needs based on the TO-220FN package's heat dissipation capabilities relative to the application's power dissipation limits.
This part belongs to ROHM's discrete semiconductor transistor lineup, specifically optimized for medium-power switching tasks. The TO-220FN form factor facilitates direct heatsink attachment, distinguishing it from standard insulated variants. It serves as a complement to other power transistors within the manufacturer's portfolio for industrial and consumer electronics.
The 2SB1668 PNP transistor is listed as a complementary pair within the same product family. Verify pinout compatibility and matching electrical parameters if designing differential or push-pull configurations requiring matched NPN/PNP pairs.