2SD2653TL

Overview

The 2SD2653TL is a silicon NPN single bipolar junction transistor manufactured by ROHM Semiconductor. It features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 12 V. The device operates in a surface-mount TSMT-3 package with a power dissipation rating of 1 W. Key electrical characteristics include a DC current gain (hFE) minimum of 270, a collector-emitter saturation voltage of 180 mV, and a gain-bandwidth product (fT) of 360 MHz.

Feature Summary

• High-speed switching capability supported by a 360 MHz gain-bandwidth product
• Low saturation voltage for efficient power handling in low-voltage circuits
• Robust DC current gain ensuring reliable amplification performance

Applications

• General-purpose low-voltage switching applications
• Amplifier stages requiring high current drive
• Consumer electronic circuit protection

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Ensure compatibility with RoHS directives if required by the target market. Confirm thermal management requirements align with the 1 W power dissipation limit in the TSMT-3 package during operation.

Selection Notes

Select this component for designs requiring a 2 A NPN switch with a 12 V breakdown voltage. Consider the 360 MHz fT for frequency-sensitive applications. Evaluate the TSMT-3 footprint against available board space and ensure the 180 mV saturation voltage meets efficiency targets.

Part Context

This part belongs to ROHM's series of general-purpose NPN transistors designed for surface-mount technology. It provides a balance of current handling and speed suitable for compact consumer electronics. The TSMT-3 package allows for automated assembly and reduced board area compared to through-hole alternatives.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the source material.