2SD2654E3TLV

Overview

The ROHM Semiconductor 2SD2654E3 is a general-purpose NPN silicon bipolar junction transistor housed in an EMT3 (SOT-416) surface-mount package. It features a collector-emitter voltage of 50V and a continuous collector current rating of 150mA. The device offers high DC current gain ranging from 820 to 2700, a maximum collector-base breakdown voltage of 60V, and a low saturation voltage of 300mV at specified test conditions.

Feature Summary

• High DC current gain for efficient signal amplification
• Low saturation voltage to minimize power loss during switching
• High emitter-base voltage tolerance for robust operation

Applications

• Low frequency amplifier circuits
• General purpose driver applications

Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm packaging details such as tape width and reel size. Ensure that the component meets RoHS compliance requirements for your target market. Confirm storage conditions to prevent degradation of solderability before mounting.

Selection Notes

Select this component for designs requiring high current gain within a compact SMD footprint. Evaluate the thermal dissipation capabilities relative to the ambient temperature and ensure the operating junction temperature remains within the specified limits during steady-state loading.

Part Context

This part belongs to the 2SD2654 series of general-purpose transistors manufactured by ROHM Semiconductor. It utilizes silicon technology and is designed for standard electronic equipment applications including audio, office automation, and telecommunications devices.

Replacement Considerations

Consult the manufacturer's documentation for verified substitute part numbers or cross-reference options. Ensure any replacement maintains identical pinout configuration and electrical ratings to guarantee circuit compatibility.