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Product Detailed Parameters
- Description：TRANS NPN 50V 0.15A EMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：150 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：300nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：1200 @ 1mA, 5V
- Power - Max：150 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：EMT3
- Grade：-
- Qualification：-
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Overview
The 2SD2654TLW is a general-purpose NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It operates with a collector-emitter voltage of 50V and a maximum continuous collector current of 150mA. The device features a transition frequency of 250MHz and a DC current gain ranging from 560 to 2700 depending on the classification rank. It is housed in an EMT3 (SOT-416) surface-mount package, designed for low-frequency amplification and driver applications.
Feature Summary
- High DC current gain capability across multiple classification ranks
- Enhanced emitter-base breakdown voltage rating
- Low collector-emitter saturation voltage for efficient switching
Applications
- Low frequency amplifier circuits
- General purpose driver stages
Procurement Notes
Verify the specific hFE ranking suffix required for your design, as the base part number covers multiple gain classifications. Confirm that the EMT3 package dimensions align with your PCB footprint. Ensure thermal derating calculations account for the 150mW power dissipation limit under your specific ambient operating conditions.
Selection Notes
Select this component when a compact SOT-416 form factor is required alongside moderate voltage handling. The high gain variants are suitable for low-current signal amplification where minimal base drive is available. Consider the 12V emitter-base voltage rating if driving from sources with higher potential than standard small-signal transistors allow.
Part Context
This component belongs to the 2SD2654 series of general-purpose NPN transistors. It shares electrical characteristics with other suffixes such as TLV, differing primarily in packaging or taping specifications rather than core semiconductor performance parameters.
Replacement Considerations
2SD2654E3TLV
FAQ
What is the maximum emitter-base voltage?
The maximum emitter-base voltage (VEBO) is rated at 12V.
How is the DC current gain classified?
The DC current gain (hFE) is classified into ranks U, V, and W, covering ranges from 560 up to 2700 at IC=1mA and VCE=5V.
What is the typical transition frequency?
The transition frequency (fT) is typically 250MHz under conditions of VCE=5V and IE=-10mA.
