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Product Detailed Parameters
- Description：TRANS NPN 12V 2A MPT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：12 V
- Vce Saturation (Max) @ Ib, Ic：180mV @ 50mA, 1A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：270 @ 200mA, 2V
- Power - Max：2 W
- Frequency - Transition：360MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：MPT3
- Grade：-
- Qualification：-
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Overview
The 2SD2661T100 is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter maximum voltage (VCEO) of 12 V, a collector-base voltage (VCBO) of 15 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a continuous collector current of 2 A with a power dissipation rating of 2 W. Key electrical parameters include a DC current gain (hFE) ranging from 270 to 680 at 200 mA and 2 V, a saturation voltage of 180 mV, and a transition frequency (fT) of 360 MHz. It operates within a temperature range up to +150°C and is housed in an SOT-89-3 surface-mount package.
Feature Summary
- High DC current gain capability for efficient signal amplification
- Low collector-emitter saturation voltage for reduced power loss
- Wide operating temperature range suitable for demanding environments
Applications
- General-purpose switching circuits
- Amplifier stages requiring high gain
- Power management applications
Procurement Notes
Verify the component status before procurement as the 2SD2661T100 is designated as Not Recommended for New Designs (NRND). Confirm availability through authorized distributors or existing stock channels. Ensure that the SOT-89-3 package dimensions align with your PCB footprint requirements. Check for RoHS compliance details if environmental regulations apply to your specific manufacturing process.
Selection Notes
Select this component when a low-voltage NPN transistor with high current handling and high gain is required. The 12 V VCEO rating limits its use to low-voltage applications compared to higher voltage alternatives. Consider the 2 W power dissipation and thermal management needs for your design. The SOT-89-3 package offers a compact solution for surface-mount assembly.
Part Context
This part belongs to ROHM's lineup of general-purpose bipolar junction transistors. It is designed for applications requiring reliable switching and amplification in low-voltage circuits. The SOT-89-3 package provides a balance between power handling and size. As an NRND part, it is primarily intended for legacy system maintenance rather than new product development.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official ROHM resources for potential replacements.
