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The 2SD2671TL is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 2 A. The device supports surface mount installation in a TSMT-3 package with a power dissipation capacity of 1 W. Key electrical characteristics include a gain-bandwidth product of 280 MHz, an emitter-base voltage of 6 V, and a collector-emitter saturation voltage of 370 mV. The component operates at temperatures up to +150°C.
Verify the specific suffix 'TL' corresponds to the tape-and-reel packaging format required for your production line. Confirm that the TSMT-3 footprint matches your PCB layout dimensions. Ensure thermal management strategies account for the 1 W power dissipation limit under worst-case operating conditions. Cross-reference the datasheet revision date to ensure compliance with current RoHS standards.
Select this component when a high-current NPN transistor with moderate voltage ratings is required for surface-mount designs. Compare the 2A current limit against your peak load requirements. Evaluate the 280 MHz bandwidth against your signal frequency needs. Consider the thermal resistance of the TSMT-3 package relative to your available copper area for heat dissipation.
This part belongs to the 2SD267x series of general-purpose NPN transistors from ROHM. It shares similar voltage ratings with other members but differs in current handling capabilities. The series is designed for versatile use in consumer electronics and industrial control systems where reliable switching performance is critical.
Direct substitutes may include the 2SD2673TL for higher current applications or the 2SD2654TLW for lower current needs. Verify pinout compatibility and thermal characteristics before substitution. Consult official cross-reference lists for validated alternatives.