2SD2672TL

Overview

The 2SD2672TL is an NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor, designed for low-frequency amplification and switching applications. It features a collector-emitter voltage (VCEO) of 12 V and a maximum DC collector current of 4 A. The device operates in a surface-mount SOT-346T package with a power dissipation rating of 0.5 W. Key electrical parameters include a collector-base voltage (VCBO) of 12 V, an emitter-base voltage (VEBO) of 5 V, and a collector-emitter saturation voltage of 250 mV at specified currents. The DC current gain (hFE) ranges from 270 to 680 at 200 mA and 2 V. The component supports a maximum operating temperature of +150°C and complies with RoHS standards.

Feature Summary

• Low collector-emitter saturation voltage for efficient switching performance
• High DC current gain suitable for low-frequency amplification
• Robust thermal stability with high maximum junction temperature rating

Applications

• Low frequency amplifier circuits
• General purpose switching applications
• Driver stages in electronic control systems

Procurement Notes

Verify the specific suffix TL against official ROHM documentation to confirm packaging configuration and reel specifications. Ensure compatibility with SOT-346T footprint requirements during PCB layout. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration. Cross-reference part numbers to distinguish between standard and final sale inventory statuses before procurement.

Selection Notes

Select this component when high current handling up to 4 A is required in a compact surface-mount form factor. The low saturation voltage minimizes power loss in switching modes. Verify that the 12 V voltage rating aligns with circuit supply levels. Consider the 0.5 W power dissipation limit for thermal management design. Ensure the hFE range meets the base drive requirements for the intended application load.

Part Context

The 2SD2672 belongs to ROHM's series of low VCE(sat) transistors optimized for general-purpose use. It serves as a replacement for older discrete solutions requiring higher efficiency in low-voltage environments. The TSMT3 package variant offers a standardized footprint for automated assembly. This component type is commonly integrated into consumer electronics and industrial control boards where space constraints and thermal performance are critical design factors.

Replacement Considerations

Check for direct substitutes within the same ROHM family such as the 2SD2672 without suffix if packaging differs. Verify pinout compatibility with existing board layouts. Compare absolute maximum ratings to ensure no derating issues arise in the target application environment.