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The 2SD2675TL is a single NPN bipolar junction transistor manufactured by ROHM Semiconductor. It operates with a maximum collector-emitter voltage of 30 V and supports a continuous collector current of 1 A. The device features a transition frequency of 320 MHz and a maximum power dissipation of 500 mW. It utilizes the TSMT3 surface-mount package, also identified as SC-96. Key electrical characteristics include a minimum DC current gain of 270 at 100 mA and 2 V, and a maximum collector-emitter saturation voltage of 350 mV under specified conditions.
Verify the specific ordering suffix to confirm the tape-and-reel packaging configuration intended for high-volume manufacturing. Ensure that the thermal management strategy aligns with the 500 mW power dissipation limit under expected operating ambient temperatures. Confirm RoHS compliance status through the official datasheet before finalizing component selection for regulated markets.
Select this component when a compact NPN transistor is required for circuits demanding up to 1 A of collector current. The 30 V breakdown voltage makes it suitable for low-voltage logic interfacing. Consider the TSMT3 package dimensions for PCB layout constraints. Evaluate the hFE range against the base drive requirements of the target application circuit to ensure proper saturation or linear operation.
This part belongs to the 2SD2675 series of general-purpose transistors from ROHM. It is designed for use in consumer electronics and industrial control systems where space efficiency is critical. The TSMT3 package provides a balance between thermal performance and footprint size compared to larger through-hole alternatives.
Consult official substitution lists for equivalent NPN transistors with matching 30 V ratings and similar current capabilities. Verify pinout compatibility and package dimensions before replacing the original component in existing designs.