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The 2SD2679T100 is a silicon NPN bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage of 30V and a continuous collector current rating of 2A. The device operates with a power dissipation capacity of 500mW and utilizes an SMD/SMT mounting style. Key electrical characteristics include a DC current gain (hFE) range of 270 to 680 at 200mA, a transition frequency (fT) of 200MHz, and a collector-emitter saturation voltage of 250mV. The maximum operating temperature reaches +150°C.
Verify the specific datasheet version and RoHS compliance status directly with ROHM Semiconductor or authorized distributors before procurement. Confirm that the NRND (Not Recommended for New Designs) status does not impact long-term supply requirements for existing production lines. Ensure packaging specifications match manufacturing needs.
Select this component when a 30V NPN transistor with 2A current capability is required. Consider the 270-680 hFE range for biasing stability. Evaluate thermal management for 500mW dissipation in the chosen package. Compare against alternatives if higher voltage or current ratings are needed.
This part belongs to ROHM's series of low-frequency amplifier transistors. It shares design similarities with other members like the 2SD2672 and 2SD2673, offering comparable performance in terms of gain and saturation voltage within the same voltage class. It is designed for surface-mount integration.
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult ROHM's official replacement guide or equivalent parameter matching from other manufacturers if obsolescence becomes an issue.