2SD2695(T6CNO,A,F)

Description：TRANS NPN 60V 2A TO-92MOD
Series：-

SKU:642e1434b130 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS NPN 60V 2A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)：10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：2000 @ 1A, 2V
Power - Max：900 mW
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Download product information

2SD2695(T6CNO,A,F)

Overview

The Toshiba 2SD2695 is a Silicon NPN Epitaxial Darlington Power Transistor designed for micro motor drive, hammer drive, and power amplifier applications. It features a high DC current gain of 2000 (min) at VCE = 2 V and IC = 1 A, alongside a low saturation voltage of 1.5 V (max) under identical conditions. The device includes an integrated Zener diode between the collector and base terminals. Absolute maximum ratings specify a collector-emitter voltage of 60 V, a collector current of 2 A, and a collector power dissipation of 0.9 W at 25°C ambient temperature.

Feature Summary

High DC current gain capability with a minimum value of 2000 at specified test conditions
Low collector-emitter saturation voltage to minimize power loss during switching operations
Integrated Zener diode connected between the collector and base terminals for protection

Applications

Micro Motor Drive
Hammer Drive Applications
Power Amplifier Applications

Procurement Notes

Verify RoHS compatibility status by contacting the manufacturer or authorized distributor, as environmental compliance varies by production lot. Confirm that the specific ordering suffix matches the required lead-free or standard configuration. Review the latest Toshiba Semiconductor Reliability Handbook for derating concepts and methods before finalizing component selection for your design.

Selection Notes

Select this component when high current amplification is required in a compact package. Ensure the operating collector current remains within the 2 A limit and verify thermal management capabilities for the 0.9 W power dissipation rating. Consider the built-in Zener diode for base-collector transient suppression needs. Evaluate the transition frequency characteristics against the target application speed requirements.

Part Context

This part belongs to the family of Silicon NPN Epitaxial Type transistors manufactured using the PCT process. It is housed in a JEDEC TO-92MOD package, also designated as TOSHIBA 2-5J1A. The device weighs approximately 0.36 g. It is distinct from standard bipolar transistors due to its Darlington configuration, which provides significantly higher current gain than single-transistor designs.