2SD2695,T6F(J

Description：TRANS NPN 60V 2A TO-92MOD
Series：-

SKU:42778803e92a Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 60V 2A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)：10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：2000 @ 1A, 2V
Power - Max：900 mW
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

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2SD2695,T6F(J

Overview

The Toshiba 2SD2695 is a silicon NPN epitaxial planar Darlington power transistor housed in a TO-92MOD package. It features a high DC current gain of 2000 minimum at VCE = 2 V and IC = 1 A, alongside a low collector-emitter saturation voltage of 1.5 V maximum under the same conditions. The device includes an integrated Zener diode between the collector and base terminals for protection. Absolute maximum ratings specify a collector-base voltage of 50 V, a collector-emitter voltage of 60 V, and a continuous collector current of 2 A.

Feature Summary

High DC current gain capability suitable for sensitive control circuits
Low saturation voltage to minimize power loss during conduction
Integrated Zener diode between collector and base for transient protection

Applications

Micro motor drive applications
Hammer drive mechanisms
General switching applications
Power amplifier circuits

Procurement Notes

Verify RoHS compatibility status by checking the lot number marking on the component body or contacting the manufacturer directly, as indicated in the datasheet notes. Ensure the ordering suffix matches the required environmental compliance specifications. Confirm the package type is TO-92MOD and verify pinout alignment with the base, emitter, and collector configuration before integration into the design.

Selection Notes

Select this component when high current amplification is required within a compact form factor. The built-in Zener diode simplifies circuit design by protecting against voltage spikes across the collector-base junction. Consider the thermal derating requirements for continuous operation near the maximum power dissipation limit of 0.9 W. Evaluate the transition frequency characteristics if high-speed switching performance is critical for the specific application timing.

Part Context

This part belongs to Toshiba's lineup of silicon NPN epitaxial planar transistors designed for power handling. The Darlington configuration provides superior current gain compared to standard bipolar transistors. The TO-92MOD package offers a robust mechanical structure suitable for through-hole mounting while maintaining electrical isolation capabilities required in various electronic assemblies.

Replacement Considerations

Consult official replacement lists from Toshiba Semiconductor and Storage for verified equivalent components. Cross-referencing with other manufacturers requires careful validation of absolute maximum ratings and electrical parameters to ensure functional compatibility without compromising circuit reliability.