2SD2696T2L

2SD2696T2L

$0.37
  • Description:TRANS NPN 30V 0.4A VMT3
  • Series:-

SKU:cae1185d7712 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 30V 0.4A VMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):400 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:270 @ 100mA, 2V
  • Power - Max:150 mW
  • Frequency - Transition:400MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:VMT3
  • Grade:-
  • Qualification:-

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2SD2696T2L

Overview

The 2SD2696T2L is an NPN silicon epitaxial planar transistor manufactured by ROHM Semiconductor. It belongs to the low-frequency amplification and switching category, designed for compact surface-mount applications. The device features a VMT3 package with dimensions of 1.2 mm x 0.8 mm x 0.4 mm, enabling high-density PCB layouts. Key electrical characteristics include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 400 mA. The component exhibits a low collector saturation voltage, enhancing efficiency in switching circuits. It operates within a temperature range of -55°C to +150°C and supports tape-and-reel packaging for automated assembly.

Feature Summary

  • Compact 1208 size package reduces footprint compared to conventional 2012 components
  • Low collector saturation voltage improves switching efficiency
  • NPN silicon epitaxial planar structure ensures stable performance
  • Suitable for both low-frequency amplification and general switching applications

Applications

  • Low-frequency signal amplification circuits
  • General-purpose switching applications
  • Automated surface-mount assembly processes

Procurement Notes

Verify the complete part number including the T2L suffix to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference the VMT3 package outline with your PCB footprint library to guarantee mechanical compatibility. Validate thermal management requirements against the specified power dissipation limits under actual operating conditions.

Selection Notes

Select this component when space constraints require a smaller footprint than standard 2012 packages while maintaining 400 mA current handling capability. The low saturation voltage makes it suitable for battery-powered or efficiency-sensitive designs. Ensure the application voltage does not exceed the 50 V collector-emitter rating. Consider the VMT3 package dimensions during layout planning to avoid clearance issues with adjacent components.

Part Context

This transistor is part of ROHM's lineup of miniaturized bipolar junction transistors designed for modern electronics requiring reduced board space. The 2SD2696 series specifically targets applications where traditional larger packages are impractical. It serves as a direct replacement for older generation transistors in similar roles, offering improved density without sacrificing current capacity or voltage ratings.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers' components. Consult ROHM Semiconductor for officially recommended equivalents if supply chain adjustments are necessary.

2SD2696T2L2SD2696T2L
$0.37
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