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Product Detailed Parameters
- Description：TRANS NPN 12V 2A TUMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：12 V
- Vce Saturation (Max) @ Ib, Ic：180mV @ 50mA, 1A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：270 @ 200mA, 2V
- Power - Max：800 mW
- Frequency - Transition：360MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, Flat Leads
- Supplier Device Package：TUMT3
- Grade：-
- Qualification：-
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Overview
The 2SD2700TL is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It operates with a maximum collector-emitter voltage of 12 V and a continuous collector current of 2 A. The device features a low collector-emitter saturation voltage of 180 mV and a power dissipation rating of 800 mW. Its gain-bandwidth product reaches 360 MHz, supporting high-frequency applications. The component is housed in an SOT-323T-3 surface-mount package and functions within a junction temperature range up to +150°C.
Feature Summary
- Low saturation voltage for efficient switching performance
- High DC current gain for effective signal amplification
- Compact surface-mount packaging for space-constrained designs
Applications
- General-purpose switching circuits
- Amplifier stages in consumer electronics
- Driver circuits for low-voltage loads
Procurement Notes
Verify the specific ordering suffix against official ROHM documentation to confirm exact taping specifications and reel quantities. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the part marking on received components with the official datasheet to prevent counterfeit substitution during assembly.
Selection Notes
Select this component when a compact NPN transistor with high current capability and low saturation voltage is required. The SOT-323T-3 package suits applications with strict spatial limitations. Consider the 12 V voltage rating and 800 mW power dissipation limits to ensure adequate thermal headroom for the intended operating conditions.
Part Context
This component belongs to the ROHM Bipolar Junction Transistor family, specifically designed for general-purpose use. It utilizes silicon technology and is optimized for surface-mount assembly. The device serves as a fundamental active element in electronic circuits requiring reliable switching and amplification at low voltages.
Replacement Considerations
The 2SD2702TL is a documented alternative within the same manufacturer lineup, offering similar voltage ratings but differing in current capacity and transition frequency specifications.
