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The Rohm Semiconductor 2SD2702TL is a single NPN bipolar junction transistor (BJT) designed for surface-mount applications. It features a maximum collector current of 1.5 A and a collector-emitter breakdown voltage of 12 V. The device operates with a transition frequency of 400 MHz and supports a maximum power dissipation of 800 mW. Key electrical characteristics include a DC current gain of at least 270 at 200 mA, and a collector-emitter saturation voltage of 200 mV at 500 mA. It utilizes the TUMT3 package and functions within a junction temperature range up to 150°C.
Verify the specific ordering suffix against official Rohm documentation to confirm package type and taping specifications. Confirm RoHS compliance status and environmental declarations prior to procurement. Ensure design-in compatibility with the TUMT3 footprint and verify thermal management requirements for the specified power dissipation limits in the final application.
Select this component for designs requiring an NPN transistor with a 12 V rating and 1.5 A continuous current capability. The low saturation voltage makes it suitable for applications prioritizing efficiency in signal amplification or switching. Consider the 400 MHz transition frequency when evaluating bandwidth requirements for the intended circuit topology.
This component belongs to the 2SD2702 series of NPN transistors manufactured by Rohm Semiconductor. It is part of a lineup optimized for automotive and industrial applications, often featuring AEC-Q101 qualification. The TUMT3 package provides a compact form factor compared to through-hole alternatives, supporting modern automated surface-mount assembly processes.
Consult official substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters carefully when considering alternative manufacturers.