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The Renesas 2SD476KC-E is a silicon NPN triple diffused transistor designed for high-power applications. It features a maximum collector current of 4 A and a collector-emitter voltage rating of 50 V. The device has a minimum DC current gain (hFE) of 35 and supports a maximum power dissipation of 40 W. It operates at temperatures up to 150 °C and utilizes a flange mount package with the collector connected to the case.
Verify the specific suffix 'KC-E' against official Renesas documentation to confirm exact manufacturing lot or compliance status, as standard datasheets may list only the base part number. Ensure the supplier provides traceable component history and authenticity guarantees. Confirm that the flange mount package matches your thermal management requirements.
Select this component when a robust NPN transistor with 4 A continuous current capability and 50 V breakdown voltage is required. The flange mount package facilitates direct heatsinking for effective thermal management in high-power scenarios. Consider the 40 W power dissipation limit and ensure adequate cooling solutions are integrated into the system design.
This component belongs to the Renesas discrete semiconductor transistor family. It is a legacy Hitachi product now managed by Renesas Electronics Corporation. The device is engineered for reliability in demanding electronic environments, offering stable performance for power switching and amplification tasks within its specified electrical limits.
Consult official Renesas documentation for verified substitute part numbers. Cross-referencing with generic equivalents requires careful validation of pinout compatibility, thermal resistance, and electrical ratings to ensure safe operation.