2SD600KF

2SD600KF

$0.14
  • Description:TRANS NPN 120V 1A TO-126
  • Series:-

SKU:a0867b2f0d5c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 120V 1A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 50mA, 5V
  • Power - Max:1 W
  • Frequency - Transition:130MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

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2SD600KF

Overview

The 2SD600KF is a single NPN bipolar junction transistor manufactured by onsemi. It is housed in a TO-126 through-hole package and is designed for general-purpose switching and amplification applications. The device features a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 1 A. With a transition frequency of 130 MHz, it supports high-speed operations, while its power dissipation capability reaches 1 W under specified thermal conditions.

Feature Summary

  • Single NPN configuration for dedicated circuit integration
  • Through-hole TO-126 package for robust mechanical mounting
  • High-voltage tolerance suitable for demanding environments

Applications

  • General-purpose switching circuits
  • Amplifier stages requiring moderate power handling
  • Industrial control systems

Procurement Notes

Verify the exact ordering suffix against the manufacturer's official datasheet to ensure compatibility with specific thermal or electrical variants. Confirm that the TO-126 package dimensions match your PCB footprint requirements. Check for any recent supply chain updates from authorized distributors to mitigate availability risks during production planning.

Selection Notes

Select this component when a 120 V blocking capability and 1 A current capacity are required in a standard through-hole format. Ensure the application's power dissipation does not exceed 1 W without adequate heatsinking. Compare transition frequency specifications if high-frequency performance is critical for the target signal processing task.

Part Context

This transistor belongs to onsemi's discrete semiconductor portfolio, specifically within the bipolar junction transistor category. It serves as a fundamental building block for analog and digital circuits where reliable switching and linear amplification are necessary. The product line emphasizes industrial-grade reliability and consistent performance across various electronic designs.

Replacement Considerations

Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and electrical parameter margins before swapping components to avoid circuit malfunction.

2SD600KF2SD600KF
$0.14
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