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Product Detailed Parameters
- Description：TRANS NPN 85V 6A TO-220AB
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：6:00 AM
- Voltage - Collector Emitter Breakdown (Max)：85 V
- Vce Saturation (Max) @ Ib, Ic：2V @ 400mA, 4A
- Current - Collector Cutoff (Max)：100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1A, 5V
- Power - Max：40 W
- Frequency - Transition：15MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The onsemi 2SD613E is a silicon NPN epitaxial planar power transistor designed for low-frequency power amplifier applications. It features a maximum collector current of 6 A and a collector-emitter breakdown voltage of 85 V. The device is housed in a TO-220AB package, suitable for through-hole mounting. Key electrical characteristics include a maximum power dissipation of 40 W and a transition frequency (fT) supporting audio frequency operations. The component operates at a maximum junction temperature of +150°C.
Feature Summary
- NPN epitaxial silicon construction optimized for high-current switching and amplification
- High power handling capability with 40 W dissipation rating
- Designed specifically for low-frequency power amplifier circuits
Applications
- Low-frequency power amplifier stages
- Audio output driver circuits
- General-purpose power switching applications
Procurement Notes
Verify the specific datasheet revision and manufacturer documentation to confirm pinout compatibility and thermal resistance values before integration. Ensure that the procurement source provides official onsemi documentation to validate the RoHS compliance status and manufacturing origin. Cross-reference the part number suffix with the manufacturer's latest release notes to confirm any changes in mechanical dimensions or material composition.
Selection Notes
Select this component when designing circuits requiring an NPN power transistor with a minimum 85 V collector-emitter voltage and 6 A continuous current capacity. The TO-220AB package facilitates effective heat dissipation for high-power applications. Consider the thermal management requirements carefully, as the 40 W power dissipation rating depends heavily on the heatsinking solution and ambient operating conditions.
Part Context
The 2SD613E belongs to the broader family of onsemi bipolar junction transistors (BJTs). This series includes various NPN and PNP configurations tailored for different power and voltage levels. The 2SD613 variant specifically targets audio and low-frequency power amplification, distinguishing itself from general-purpose small-signal transistors by its higher current and power handling capabilities within the same packaging technology.
