2SD667-B-AP

Overview

The 2SD667-B-AP is an NPN silicon plastic-encapsulated transistor manufactured by Micro Commercial Components. It features a collector-emitter breakdown voltage of 80V and a collector-base breakdown voltage of 120V. The device supports a maximum collector current of 1A and dissipates up to 900mW of power. Its transition frequency is typically 140MHz, with a DC current gain (hFE) range of 60 to 320 for the B-rank classification. Operating and storage junction temperatures span from -55°C to +150°C.

Feature Summary

• Plastic encapsulation meets UL 94 V-0 flammability rating
• Moisture sensitivity level 1 certification
• Lead-free finish compliant with RoHS standards

Applications

• General-purpose switching applications
• Amplifier circuits requiring moderate power handling
• Low-frequency signal processing

Procurement Notes

Verify component authenticity through authorized MCC distributors or direct manufacturer channels to avoid counterfeit parts. Confirm RoHS compliance status via ordering suffixes if halogen-free requirements are necessary. Check datasheet revisions for updated electrical characteristics before final integration into designs.

Selection Notes

Select this component when an NPN transistor with 80V collector-emitter voltage and 1A continuous current capability is required. Ensure the TO-92MOD package fits the board layout constraints. Verify that the hFE rank B specification aligns with circuit gain requirements.

Part Context

This part belongs to the 2SD667 series of NPN silicon transistors produced by Micro Commercial Components. The series includes variants such as 2SD667A with higher voltage ratings. The product line emphasizes standard through-hole packaging suitable for general electronic equipment manufacturing.

Replacement Considerations

Consult official MCC documentation for verified substitute part numbers. Cross-reference pinouts and electrical parameters carefully when considering alternative manufacturers' components.