2SD667-D-AP

Overview

The 2SD667-D-AP is an NPN silicon plastic-encapsulated transistor manufactured by Micro Commercial Components. It features a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. The device supports a power dissipation capability of 900mW and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) rank D, ranging from 160 to 320 at 150mA and 5V. Transition frequency is typically 140MHz, with a collector-base breakdown voltage of 120V.

Feature Summary

• Plastic encapsulation with UL 94 V-0 flammability rating
• High collector-base voltage capability of 120V
• Designed for high switching speeds via cellular emitter structure
• RoHS compliant and lead-free finish

Applications

• General-purpose amplification circuits
• Switching applications requiring fast response times
• Low-voltage power regulation stages

Procurement Notes

Verify the specific ordering suffix to confirm packaging type and compliance status. The '-AP' suffix indicates ammo packing configuration. Ensure procurement channels are authorized distributors to guarantee genuine parts with full traceability. Confirm RoHS compliance requirements match the specific batch documentation provided by the manufacturer prior to finalizing orders.

Selection Notes

Select this component when an NPN transistor with 80V collector-emitter voltage and 1A continuous current capacity is required. The hFE rank D specification ensures a gain range of 160 to 320, suitable for linear amplification needs. Verify that the TO-92MOD package dimensions fit the target PCB layout constraints and thermal management requirements for 900mW dissipation.

Part Context

This part belongs to the 2SD667 series of NPN silicon transistors produced by Micro Commercial Components. The series utilizes planar technology for rugged performance. The 'D' designation specifically refers to the DC current gain binning classification. The component is housed in a TO-92MOD package, distinguishing it from standard through-hole variants while maintaining similar electrical profiles.

Replacement Considerations

Check datasheets for alternative NPN transistors offering identical 80V V(BR)CEO and 1A Ic ratings. Verify pinout compatibility and package dimensions before substitution. Ensure replacement devices meet or exceed the required hFE gain range and transition frequency specifications for the intended circuit application.