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The 2SD667L-B-AP is an NPN plastic-encapsulated transistor manufactured by Micro Commercial Components. It features a collector-emitter voltage of 80 V, a collector current of 1 A, and a power dissipation of 900 mW. The device exhibits a transition frequency of 140 MHz and a DC current gain ranging from 60 to 320 depending on the classification. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-92L package.
Verify authenticity through authorized MCC distributors or direct purchase to avoid counterfeit components. Confirm the specific suffix (B-AP) indicates ammo packing containing 2,000 pieces per box. Ensure compliance with RoHS standards and lead-free finish requirements during procurement.
Select this component when an NPN transistor with 80 V breakdown and 1 A continuous current capability is required. Consider the complementary 2SB647/A if push-pull configurations are needed. Verify that the TO-92L package dimensions fit the target PCB layout and thermal management constraints.
This part belongs to the 2SD667L family of NPN transistors produced by Micro Commercial Components. It is designed as a rugged, high-performance device utilizing planar technology. The product line includes various packaging options and hFE classifications to suit different circuit gain requirements.
The datasheet explicitly identifies the 2SB647/A as the complementary pair. No other direct substitute part numbers are documented in the provided source material.
The maximum collector-base voltage (VCBO) rating is 120 V.
The DC current gain (hFE) is classified into B (60-120), C (100-200), and D (160-320) ranges at IC=150mA and VCE=5V.
The 'AP' suffix designates Ammo Packing, which contains 2,000 pieces per ammo box.