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The 2SD667L-C-AP is an NPN silicon epitaxial transistor manufactured by Micro Commercial Components (MCC). It features a TO-92L plastic-encapsulated package with a maximum collector-emitter voltage of 80 V and a collector current rating of 1 A. The device dissipates up to 900 mW at room temperature, with a transition frequency of 140 MHz. DC current gain ranges from 100 to 200 for the 'C' classification. It operates within a junction temperature range of -55°C to +150°C.
Verify authenticity through authorized MCC distributors or direct procurement channels. Counterfeit components are prevalent; unauthorized sources lack traceability and quality assurance. Confirm the specific 'C' hFE binning requirement matches design specifications before ordering. Ensure packaging type aligns with assembly needs.
Select this component when a standard NPN transistor with 80V breakdown and 1A continuous current capability is required. The TO-92L package suits through-hole mounting in compact designs. Verify thermal management requirements against the 139°C/W junction-to-ambient resistance. Consider the complementary 2SB647/A if designing matched pairs.
This part belongs to the 2SD667L series of NPN transistors produced by Micro Commercial Components. It utilizes a plastic-encapsulated construction suitable for general electronic applications. The product line includes various hFE classifications, with the 'C' suffix denoting a specific gain range of 100 to 200.
The datasheet identifies the 2SB647/A as the complementary pair. Cross-manufacturer equivalents may exist but require verification of pinout compatibility and electrical limits.
The 'C' classification indicates a minimum DC current gain (hFE) of 100 and a maximum of 200 when measured at IC=150mA and VCE=5V.
Yes, the datasheet states that the 'P' suffix designates lead-free finish and RoHS compliance.
The maximum collector-base voltage (VCBO) is rated at 120 V.