2SD667L-C-AP

2SD667L-C-AP

  • Description:TRANS NPN 80V 1A TO-92
  • Series:-

SKU:ac9a230dfcee Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 80V 1A TO-92
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 5V
  • Power - Max:900 mW
  • Frequency - Transition:140MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

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2SD667L-C-AP

Overview

The 2SD667L-C-AP is an NPN silicon epitaxial transistor manufactured by Micro Commercial Components (MCC). It features a TO-92L plastic-encapsulated package with a maximum collector-emitter voltage of 80 V and a collector current rating of 1 A. The device dissipates up to 900 mW at room temperature, with a transition frequency of 140 MHz. DC current gain ranges from 100 to 200 for the 'C' classification. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Designed for low-frequency power amplifier applications
  • Formed as a complementary pair with the 2SB647/A PNP transistor
  • Epoxy encapsulation meets UL 94 V-0 flammability rating

Applications

  • Low-frequency power amplification circuits
  • General-purpose switching applications
  • Complementary push-pull amplifier stages

Procurement Notes

Verify authenticity through authorized MCC distributors or direct procurement channels. Counterfeit components are prevalent; unauthorized sources lack traceability and quality assurance. Confirm the specific 'C' hFE binning requirement matches design specifications before ordering. Ensure packaging type aligns with assembly needs.

Selection Notes

Select this component when a standard NPN transistor with 80V breakdown and 1A continuous current capability is required. The TO-92L package suits through-hole mounting in compact designs. Verify thermal management requirements against the 139°C/W junction-to-ambient resistance. Consider the complementary 2SB647/A if designing matched pairs.

Part Context

This part belongs to the 2SD667L series of NPN transistors produced by Micro Commercial Components. It utilizes a plastic-encapsulated construction suitable for general electronic applications. The product line includes various hFE classifications, with the 'C' suffix denoting a specific gain range of 100 to 200.

Replacement Considerations

The datasheet identifies the 2SB647/A as the complementary pair. Cross-manufacturer equivalents may exist but require verification of pinout compatibility and electrical limits.

FAQ

What is the DC current gain range for the 2SD667L-C-AP?

The 'C' classification indicates a minimum DC current gain (hFE) of 100 and a maximum of 200 when measured at IC=150mA and VCE=5V.

Is the 2SD667L-C-AP RoHS compliant?

Yes, the datasheet states that the 'P' suffix designates lead-free finish and RoHS compliance.

What is the maximum collector-base voltage rating?

The maximum collector-base voltage (VCBO) is rated at 120 V.

2SD667L-C-AP2SD667L-C-AP

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