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The 2SD667L-D-AP is an NPN plastic-encapsulated transistor manufactured by Micro Commercial Components. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 1 A. The device provides a power dissipation capacity of 900 mW with a transition frequency of 140 MHz. DC current gain ranges from 60 to 320 depending on the classification rank. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-92L package.
Verify the specific ordering suffix against official documentation, as variations such as -AP (Ammo Packing) or -BP (Bulk) indicate distinct packaging formats rather than functional changes. Confirm RoHS compliance status through the designated suffix codes provided in the manufacturer's ordering information section. Ensure procurement channels are authorized distributors to guarantee component authenticity and traceability.
Select this component when designing circuits requiring an NPN transistor with an 80 V collector-emitter breakdown voltage and 1 A continuous current capability. The TO-92L package is suitable for general-purpose mounting where thermal resistance of 139°C/W is acceptable. Consider the complementary 2SB647/A if a matched pair configuration is required for the application design.
This part belongs to the 2SD667L series of NPN transistors produced by Micro Commercial Components. The series is characterized by its use of plastic encapsulation and planar die technology. It serves as a standard discrete semiconductor solution for consumer electronics and industrial control systems requiring reliable switching and amplification performance.
The datasheet identifies the 2SB647/A as the complementary pair partner. No direct substitute part numbers are listed in the verified documentation.