2SD667L-D-BP

Overview

The 2SD667L-D-BP is an NPN plastic-encapsulated transistor manufactured by Micro Commercial Components (MCC). It operates with a collector-emitter voltage of 80 V and a continuous collector current of 1 A. The device provides a power dissipation rating of 900 mW at 25°C, supported by a thermal resistance of 139 °C/W junction to ambient. Electrical characteristics include a transition frequency of 140 MHz and a DC current gain range of 60 to 320 depending on the specific hFE classification rank.

Feature Summary

• Designed for low-frequency power amplifier applications
• Formed as a complementary pair with the 2SB647/A series
• Constructed with epoxy meeting UL 94 V-0 flammability ratings

Applications

• Low frequency power amplification circuits
• Complementary pairing with 2SB647/A transistors

Procurement Notes

Verify that the ordering suffix matches the required packaging configuration, such as bulk or ammo box quantities. Confirm RoHS compliance status based on the specific suffix designation. Ensure the component meets the intended operating temperature range from -55°C to +150°C. Validate authenticity through authorized MCC distributors to avoid counterfeit risks.

Selection Notes

Select this component when a high-gain NPN transistor is required for low-frequency power amplification tasks. Consider the TO-92L package dimensions for board layout constraints. Evaluate the thermal resistance specifications against the expected ambient temperature conditions. Check the hFE binning requirements if precise gain matching is necessary for the circuit design.

Part Context

This part belongs to the 2SD667L family of NPN silicon epitaxial transistors. It utilizes a TO-92L plastic encapsulation style with straight or bent lead configurations. The device is designed to operate within standard industrial temperature ranges and is compatible with automated assembly processes.

Replacement Considerations

The datasheet identifies the 2SB647/A as the complementary pair counterpart. Verify pinout compatibility and electrical parameters before substituting with other NPN transistors in the TO-92L package.