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Product Detailed Parameters
- Description：TRANS NPN 120V 1.5A TO-126
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1.5 A
- Voltage - Collector Emitter Breakdown (Max)：120 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 150mA, 5V
- Power - Max：1 W
- Frequency - Transition：140MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The MCC 2SD669-B-BP is an NPN silicon small-signal transistor housed in a TO-92 package. It features a maximum collector-emitter voltage of 120 V and a collector current rating of 1.5 A. The device provides a minimum DC current gain (hFE) of 60 for the B-rank classification, with a transition frequency of 140 MHz typical. It supports power dissipation up to 1 Watt and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Capable of handling 1.5 A collector current with 120 V breakdown voltage
- Provides high DC current gain suitable for amplification applications
- Utilizes plastic encapsulation meeting UL 94 V-0 flammability standards
Applications
- Low frequency power amplifier circuits
- General purpose switching applications
- Complementary pair configurations with PNP transistors
Procurement Notes
Verify the specific suffix configuration against the datasheet to ensure correct hFE ranking and compliance status. Confirm that the bulk packaging quantity matches project requirements. Ensure sourcing from authorized distributors to guarantee genuine parts and full traceability as per manufacturer guidelines.
Selection Notes
Select this component when a robust NPN transistor with 120 V capability and 1.5 A current handling is required. The B-rank offers a defined gain range starting at 60. Consider the TO-92 form factor for through-hole mounting constraints and verify thermal management needs for 1 Watt dissipation.
Part Context
This part belongs to the 2SD669 series of bipolar power general-purpose transistors manufactured by Micro Commercial Components. The series includes variants with different voltage ratings and hFE rankings, packaged in standard through-hole formats like TO-92 for versatile electronic circuit integration.
Replacement Considerations
Compatible substitutes include the 2SD669A series for higher voltage ratings or other NPN transistors with matching TO-92 packages and similar electrical characteristics such as 1.5 A current and 120 V+ voltage ratings.
FAQ
What is the collector-emitter breakdown voltage for the 2SD669?
The collector-emitter breakdown voltage (V(BR)CEO) is 120 Vdc.
Does the 2SD669-B-BP meet RoHS standards?
Yes, the 'P' suffix designates RoHS compliance, and the product has a lead-free finish.
What is the maximum power dissipation capability?
The transistor is capable of 1 Watt of power dissipation.
