2SD669A-C-BP

2SD669A-C-BP

  • Description:TRANS NPN 160V 1.5A TO-126
  • Series:-

SKU:cc42bcaa15d9 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 160V 1.5A TO-126
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1.5 A
  • Voltage - Collector Emitter Breakdown (Max):160 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 5V
  • Power - Max:1 W
  • Frequency - Transition:140MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

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2SD669A-C-BP

Overview

The 2SD669A-C-BP is an NPN silicon small-signal transistor manufactured by Micro Commercial Components. It features a maximum collector current of 1.5 A and a collector-base voltage of 180 Vdc. The device provides a minimum DC current gain (hFE) of 100 for the C rank at 500 mA. Electrical characteristics include a transition frequency of 140 MHz typical and a collector output capacitance of 14 pF typical. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Capable of handling up to 1 Watt of power dissipation with a 1.5 A collector current rating.
  • Features a high collector-base breakdown voltage of 180 Vdc for robust operation.
  • Utilizes plastic encapsulation that meets UL 94 V-0 flammability ratings.

Applications

  • Low frequency power amplifier circuits
  • General purpose switching applications
  • Complementary pair configurations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type, plating finish, and environmental compliance status. Ensure the component source is an authorized distributor to guarantee authenticity and traceability. Confirm that the bulk packaging quantity matches project requirements before finalizing procurement orders.

Selection Notes

Select this component when a high-voltage NPN transistor with a 180 V collector-base rating is required. The C rank classification ensures a minimum hFE of 100 at 500 mA, suitable for moderate gain applications. Consider the TO-92 through-hole package for standard PCB mounting needs requiring lead-free soldering compatibility.

Part Context

This part belongs to the 2SD669 series of NPN silicon transistors produced by Micro Commercial Components. The series includes variants with different voltage ratings and hFE ranks. The 'A' designation indicates the 180 V collector-base voltage variant, while the '-C' specifies the hFE binning class.

Replacement Considerations

Compatible substitutes include other NPN transistors with similar 1.5 A current ratings and voltages exceeding 180 V. Verify pinout compatibility and thermal resistance values before substitution. Check datasheets for matching hFE ranges and transition frequencies to ensure circuit performance parity.

FAQ

What is the collector-base breakdown voltage for the 2SD669A?

The collector-base breakdown voltage (V(BR)CBO) is specified as 180 Vdc.

Does the 2SD669A-C-BP meet RoHS standards?

Yes, the 'P' suffix in the part number designates that the component is RoHS compliant with a lead-free finish.

What is the minimum DC current gain for the C rank?

For the C rank classification, the minimum DC current gain (hFE) is 100 when measured at IC=500mA and VCE=5V.

2SD669A-C-BP2SD669A-C-BP

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