2SD734E

Overview

The onsemi 2SD734E is a single NPN epitaxial planar silicon bipolar junction transistor designed for general-purpose amplification and switching applications. It features a maximum collector current of 0.7 A and a collector-emitter breakdown voltage of 20 V. The device offers a minimum DC current gain (hFE) of 160 and operates at frequencies up to 250 MHz. With a power dissipation rating of 600 mW, it is housed in a cylindrical through-hole package suitable for reliable performance in various electronic circuits.

Feature Summary

• NPN epitaxial planar silicon construction for stable operation
• High-frequency capability with transition frequency up to 250 MHz
• Robust current handling with a maximum collector current of 0.7 A
• Low saturation voltage characteristics for efficient switching

Applications

• General-purpose signal amplification
• High-speed switching circuits
• Audio amplifier stages
• Driver circuits for relays or LEDs

Procurement Notes

Verify the specific suffix (e.g., AA, E) against your schematic requirements, as packaging and mechanical dimensions may vary between variants. Confirm RoHS compliance status if environmental regulations apply to your production line. Ensure the supplier provides official datasheets matching the exact part number to guarantee electrical parameter consistency. Cross-reference the pinout configuration with your PCB footprint to prevent installation errors during assembly.

Selection Notes

Select this component when a small-signal NPN transistor with moderate current capacity and high-frequency response is required. The 20 V breakdown voltage limits its use in low-voltage digital logic but suits analog signal processing. Consider thermal management due to the 600 mW dissipation limit in enclosed spaces. Compare hFE ranges with circuit biasing requirements to ensure consistent gain across production batches.

Part Context

The 2SD734 series belongs to onsemi's lineup of discrete bipolar transistors, widely used in consumer electronics and industrial control systems. As an NPN epitaxial planar device, it represents a standard solution for amplification tasks where reliability and cost-effectiveness are prioritized. The family includes various suffixes indicating different packaging options, allowing designers to choose between through-hole and surface-mount configurations based on manufacturing constraints.

Replacement Considerations

Public confirmed substitute part numbers: 2SD734E-AA.