2SD734F-AA

2SD734F-AA

$0.04
  • Description:TRANS NPN 20V 0.7A 3-NP
  • Series:-

SKU:76694651ee81 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 20V 0.7A 3-NP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):700 mA
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 50mA, 2V
  • Power - Max:600 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:3-NP
  • Grade:-
  • Qualification:-

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2SD734F-AA

Overview

The 2SD734F-AA is a single NPN silicon small-signal bipolar junction transistor manufactured by onsemi. It features a maximum collector current of 0.7 A and a collector-emitter breakdown voltage of 20 V. The device operates in a through-hole 3-NP cylindrical package with three pins. Key electrical specifications include a minimum DC current gain (hFE) of 160, a maximum power dissipation of 600 mW, and a transition frequency of 250 MHz. The component supports a maximum operating temperature of 150 °C and exhibits a collector-emitter saturation voltage of 300 mV at specified test conditions.

Feature Summary

  • NPN epitaxial planar silicon construction for reliable switching and amplification
  • High current handling capability up to 0.7 A for audio output stages
  • Low saturation voltage characteristics for efficient power management
  • Through-hole cylindrical packaging suitable for robust mechanical mounting

Applications

  • Audio amplifier output stages requiring 1W output power
  • Electronic governor circuits for speed control applications
  • DC-DC converter implementations

Procurement Notes

Verify the specific suffix 'AA' against the manufacturer's official documentation to confirm pinout configuration and electrical tolerances. Ensure the procurement source provides valid traceability for the 3-NP package type. Cross-reference the hFE binning requirements with circuit design constraints to guarantee performance consistency. Confirm compliance with relevant environmental standards if required by the end application.

Selection Notes

Select this component when a through-hole NPN transistor with 20 V rating and 0.7 A continuous current capacity is required. The 250 MHz transition frequency makes it suitable for moderate-speed switching and audio frequency amplification. Consider the 3-NP package dimensions for PCB layout compatibility. Evaluate the thermal resistance of the cylindrical package against the expected power dissipation levels in the target circuit design.

Part Context

This transistor belongs to the family of small-signal bipolar transistors designed for general-purpose amplification and switching. It serves as a discrete alternative to integrated driver solutions in low-to-medium power applications. The device complements complementary PNP counterparts often used in push-pull configurations. Its specification aligns with standard audio and power supply circuit requirements found in consumer electronics and industrial control systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

2SD734F-AA2SD734F-AA
$0.04
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