SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 2SD734F is an NPN silicon planar epitaxial transistor manufactured by onsemi. It features a cylindrical through-hole package with three leads, designed for general-purpose switching and amplification applications. The device supports a maximum collector current of 0.7 A and a collector-emitter voltage rating of 20 V. It offers a minimum DC current gain (hFE) of 160 and operates at frequencies up to 250 MHz. The component has a power dissipation capacity of 600 mW and withstands junction temperatures up to 150 °C.
Verify the specific ordering suffix against official datasheets to confirm exact electrical characteristics and packaging variations. Ensure compliance with relevant regulatory standards required for the target application environment. Cross-reference manufacturer part numbers with distributor catalogs to confirm availability and authenticity before procurement.
Select this component when designing circuits requiring moderate current handling and high-speed switching capabilities within low-voltage constraints. Consider the through-hole package format for prototyping or applications requiring mechanical robustness. Evaluate thermal management requirements based on the specified power dissipation limits and ambient operating conditions.
This component belongs to the single bipolar transistor category within onsemi's discrete semiconductor portfolio. It utilizes planar epitaxial technology to ensure reliable performance in various electronic systems. The product line focuses on providing versatile solutions for common analog and digital interface requirements.
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before implementation.