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The onsemi 2SD863F-AE is a single NPN bipolar junction transistor (BJT) housed in a TO-92VAR package. It features a maximum collector current of 1 A and a collector-emitter breakdown voltage of 50 V. The device provides a minimum DC current gain (hFE) of 60 and supports a maximum power dissipation of 0.9 W. It operates within a temperature range up to +150 °C.
Verify the specific suffix 'F-AE' against official datasheets, as standard listings often reference '2SD863'. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as regulatory markings can vary by production batch and region. Ensure the supplier source is an authorized channel to guarantee component authenticity and traceability.
Select this component for applications requiring moderate current handling at low voltages. The TO-92VAR package suits prototyping and low-volume through-hole designs. Verify that the required hFE meets the circuit's base drive capabilities and ensure the thermal management strategy accommodates the 0.9 W dissipation limit under worst-case operating conditions.
This part belongs to the general-purpose BJT category from onsemi. It serves as a fundamental active element for amplification and switching tasks in consumer electronics and industrial control systems. The TO-92VAR form factor provides a compact solution for space-constrained printed circuit board layouts requiring robust mechanical leads.
Consult official substitution guides for equivalent NPN transistors with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics before implementing any alternative components in existing designs.