2SD863F

2SD863F

$0.16
  • Description:TRANS NPN 50V 1A 3-MP
  • Series:-

SKU:867b48754a11 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 50V 1A 3-MP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 50mA, 2V
  • Power - Max:900 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:3-MP
  • Grade:-
  • Qualification:-

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2SD863F

Overview

The onsemi 2SD863F is a single NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 1A. The device is housed in a TO-92VAR through-hole package, ensuring compatibility with standard PCB layouts. It offers a minimum DC current gain (hFE) of 60 and supports a maximum power dissipation of 0.9W. The component operates within a temperature range from -55°C to +150°C, providing robust performance in various electronic circuits.

Feature Summary

  • Single NPN configuration for discrete switching and amplification tasks
  • Through-hole TO-92VAR package for reliable mechanical mounting
  • High thermal stability supporting operation up to 150°C

Applications

  • General-purpose signal amplification
  • Low-power switching circuits
  • Driver stages for relays or loads

Procurement Notes

Verify the specific suffix 'F' against the official datasheet to confirm packaging details, as it may indicate tape-and-reel supply rather than bulk. Ensure RoHS compliance documentation is requested for environmental standards. Cross-reference the manufacturer's part number directly to avoid confusion with generic equivalents that may lack identical electrical tolerances or thermal ratings.

Selection Notes

Select this component when a 50V NPN BJT with 1A current capability is required in a through-hole format. Consider the 0.9W power dissipation limit and ensure adequate heat sinking if operating near maximum ratings. Verify that the minimum hFE of 60 meets the circuit's gain requirements for the intended application load.

Part Context

The 2SD863F belongs to onsemi's discrete semiconductor product line, specifically within the bipolar junction transistor category. This series provides standard NPN configurations suitable for replacing older industry-standard parts. The TO-92VAR variant offers a compact footprint while maintaining high voltage and current handling capabilities for consumer and industrial electronics.

Replacement Considerations

Consult official substitution guides for equivalent NPN transistors with matching VCEO and IC ratings. Generic replacements must verify identical pinout configurations and thermal resistance characteristics to ensure circuit compatibility without redesign.

2SD863F2SD863F
$0.16
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