2SD874-Q-TP

2SD874-Q-TP

  • Description:TRANS NPN 25V 1A SOT-89
  • Series:-

SKU:56921fcd62c0 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 25V 1A SOT-89
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:85 @ 500mA, 10V
  • Power - Max:500 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Grade:-
  • Qualification:-

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2SD874-Q-TP

Overview

The MCC 2SD874-Q-TP is an NPN silicon power transistor housed in a SOT-89 package. It features a collector-emitter voltage of 25 V, a collector-base voltage of 30 V, and an emitter-base voltage of 5 V. The device supports a continuous collector current of 1 A with a power dissipation rating of 500 mW. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 50 to 340 depending on operating conditions, a transition frequency (fT) of 200 MHz, and a collector output capacitance of 20 pF. Junction temperature ranges from -55°C to +150°C.

Feature Summary

  • Designed for power amplifier applications
  • RoHS compliant with lead-free finish
  • Epoxy meets UL 94 V-0 flammability rating
  • Moisture sensitivity level 1

Applications

  • Power amplifier circuits
  • General-purpose switching applications
  • Low-frequency amplification stages

Procurement Notes

Verify the authenticity of the component by purchasing directly from Micro Commercial Components or authorized distributors to ensure traceability and quality standards. Confirm the specific hFE rank (Q, R, or S) required for your design, as the datasheet lists multiple gain classifications. Check for the availability of the halogen-free variant if environmental compliance beyond RoHS is necessary for your project specifications.

Selection Notes

Select this transistor based on its 25 V collector-emitter voltage and 1 A current handling capability suitable for low-to-medium power amplification. Consider the SOT-89 package for surface-mount assembly requirements. Evaluate the hFE binning options (Rank Q, R, or S) to match the gain requirements of your specific circuit design, ensuring adequate drive current margins are maintained for saturation or linear operation.

Part Context

This component belongs to the Micro Commercial Components (MCC) discrete semiconductor portfolio, specifically within their NPN silicon power transistor line. The 'Q' suffix indicates a specific forward current transfer ratio (hFE) classification range of 85 to 170. The '-TP' suffix denotes that the device is supplied in tape and reel packaging, typically containing 1,000 pieces per reel for automated surface-mount manufacturing processes.

Replacement Considerations

Datasheet references the 2SD874-R and 2SD874-S variants, which share identical electrical ratings but differ in hFE gain classification. Verify pinout compatibility and thermal performance when substituting with other NPN transistors in the SOT-89 package. Ensure any replacement part meets the same voltage, current, and power dissipation limits defined in the original specification.

2SD874-Q-TP2SD874-Q-TP

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