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Product Detailed Parameters
- Description：TRANS NPN 50V 1A SOT-89
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：85 @ 500mA, 10V
- Power - Max：500 mW
- Frequency - Transition：200MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：SOT-89
- Grade：-
- Qualification：-
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Overview
The MCC 2SD874A-Q-TP is an NPN silicon power transistor housed in a SOT-89 package. It features a collector-emitter voltage of 50 V, a collector-base voltage of 60 V, and an emitter-base voltage of 5 V. The device supports a continuous collector current of 1 A with a collector power dissipation of 500 mW. Operating junction temperature ranges from -55 to +150 °C. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 50 to 340 depending on the rank, a collector-emitter saturation voltage of 0.4 V max at 500 mA, and a transition frequency of 200 MHz.
Feature Summary
- Designed for power amplifier applications
- Utilizes planar technology for rugged high-performance operation
- Complementary PNP type available as 2SB0766
Applications
- Power amplifier circuits
- Low-frequency amplification stages
- General-purpose switching applications
Procurement Notes
Verify authenticity by purchasing directly from Micro Commercial Components or authorized distributors to avoid counterfeit parts. Confirm RoHS compliance status via ordering suffixes. Ensure the specific hFE rank (Q, R, or S) matches circuit requirements before procurement. Check datasheet revision B for accurate electrical parameters.
Selection Notes
Select this component for designs requiring medium-power NPN amplification in a compact SOT-89 footprint. Consider the complementary 2SB0766 for push-pull configurations. Evaluate thermal management needs given the 500 mW dissipation limit. Verify that the required hFE gain falls within the specified Q, R, or S classification ranges for the target operating conditions.
Part Context
This part belongs to the 2SD874 series of small-signal bipolar transistors manufactured by Panasonic and distributed by MCC. It is specifically designed for low-frequency power amplification. The device is silicon epitaxial planar type and serves as a complement to the 2SB0766 PNP transistor. The series emphasizes large collector power dissipation and low saturation voltage.
Replacement Considerations
The complementary PNP transistor for this device is the 2SB0766. For direct replacement, verify pinout compatibility and ensure the substitute meets the 50 V collector-emitter voltage and 1 A current requirements.
