2SD880-GR-BP

Overview

The 2SD880-GR-BP is an NPN silicon power transistor manufactured by Micro Commercial Components (MCC). It features a collector-emitter voltage of 60 V, a collector current of 3 A, and a collector power dissipation of 1.5 W. The device operates within a junction temperature range of -55 to +150 °C. The forward current transfer ratio ranges from 150 to 300 for the GR classification. It utilizes a TO-220 package with lead-free finish and RoHS compliance.

Feature Summary

• Designed for power amplifier applications
• Utilizes planar technology for rugged high performance
• Features low saturation voltage characteristics

Applications

• Power amplifier circuits

Procurement Notes

Verify the component authenticity through authorized MCC distributors or direct procurement channels to ensure traceability and quality standards. Confirm the specific suffix requirements, such as -BP for bulk packaging or -HF for halogen-free options, against project specifications. Check for any recent product change notifications regarding manufacturing updates or material substitutions before finalizing orders.

Selection Notes

Select this component based on its 60 V breakdown voltage and 3 A continuous collector current capabilities. Ensure the thermal management design accommodates the 1.5 W power dissipation rating in the TO-220 package. Verify that the hFE gain range of 150 to 300 aligns with the required drive conditions for the intended power amplifier application.

Part Context

This part belongs to the 2SD880 series of NPN silicon power transistors produced by Micro Commercial Components. The series includes variants distinguished by gain binning codes such as Q, Y, and GR. These transistors are engineered for general-purpose power amplification tasks requiring moderate voltage and current handling within a standard through-hole mounting configuration.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.