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The 2SD882-O-BP is an NPN silicon transistor manufactured by Micro Commercial Components. It features a collector-emitter breakdown voltage of 30 V and a collector-base breakdown voltage of 40 V. The device supports a maximum continuous collector current of 3.0 A with a power dissipation capability of 1.25 W. DC current gain ranges from 60 to 400 depending on the specific binning rank, while the transition frequency is rated at a minimum of 50 MHz. Operating junction temperature spans from -55°C to +150°C.
Verify that the ordering suffix matches the required specifications. Confirm the package type aligns with the design requirements. Ensure the manufacturer is Micro Commercial Components. Check for RoHS compliance status if necessary. Validate the component authenticity through authorized channels.
Select this component based on its NPN configuration and voltage ratings. Consider the thermal resistance and power dissipation limits. Evaluate the current gain requirements for the specific application. Ensure the operating temperature range meets the environmental conditions.
This part belongs to the 2SD882 series of NPN medium-power transistors. It is designed for general-purpose applications requiring reliable switching and amplification. The complementary PNP type is typically the 2SB772. The device is housed in a TO-126 package suitable for through-hole mounting.
Direct substitutes include other NPN transistors with similar voltage and current ratings. Verify pinout compatibility before replacement. Ensure thermal performance matches the original design constraints.
The maximum collector-emitter breakdown voltage is 30 V.
Halogen-free versions are available upon request by adding the '-HF' suffix to the part number.
The -BP suffix indicates bulk packaging containing 1,000 pieces per box.