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The 2SD882-R-BP is an NPN silicon plastic-encapsulated transistor manufactured by Micro Commercial Components. It features a collector-emitter breakdown voltage of 30 V and a collector-base breakdown voltage of 40 V. The device supports a maximum collector current of 3.0 A and dissipates up to 1.25 W of power. DC current gain ranges from 60 to 400 depending on the specific rank, with a transition frequency of at least 50 MHz. It operates within a junction temperature range of -55°C to +150°C.
Verify the exact suffix against official distributor catalogs to confirm RoHS compliance and halogen-free status. Ensure the bulk packaging quantity matches project requirements. Confirm authenticity through authorized channels to avoid counterfeit components. Check for any recent lifecycle notifications or obsolescence warnings before finalizing procurement plans.
Select this component when a robust NPN transistor with 3 A current capacity is required. Consider the specific hFE rank needed for circuit gain stability. Verify thermal management capabilities for the 1.25 W dissipation rating. Compare against complementary PNP devices if push-pull configurations are planned.
This part belongs to the family of low-voltage NPN medium power transistors produced by MCC. It utilizes planar technology for rugged performance. The device is designed as a complement to specific PNP counterparts in the same product line, facilitating matched pair applications in amplifier stages.
Direct substitutes include the 2SB772 PNP counterpart for complementary pairs. Other generic NPN transistors with similar 30 V, 3 A ratings may serve as functional replacements if pinouts and package dimensions match exactly.
The maximum continuous collector current (IC) is rated at 3.0 A.
Yes, the standard version has a lead-free finish and is RoHS compliant. Halogen-free versions are available with the -HF suffix.
The operating and storage junction temperature range is from -55°C to +150°C.