2SD991K

$3.37

Description：TRANS NPN DARL 300V 6A TO-220AB
Series：-

SKU:603e76739347 Category: Single Bipolar Transistors Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：TRANS NPN DARL 300V 6A TO-220AB
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：6:00 AM
Voltage - Collector Emitter Breakdown (Max)：300 V
Vce Saturation (Max) @ Ib, Ic：1.5V @ 40mA, 4A
Current - Collector Cutoff (Max)：100µA
DC Current Gain (hFE) (Min) @ Ic, Vce：500 @ 4A, 2V
Power - Max：50 W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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2SD991K

Overview

The 2SD991K is a single NPN Darlington bipolar junction transistor (BJT) manufactured by Renesas Electronics Corporation. It is designed for through-hole mounting in the TO-220AB package. The device features a maximum collector-emitter voltage of 300 V, a continuous collector current of 6 A, and a total power dissipation rating of 50 W. These specifications make it suitable for high-voltage switching applications requiring significant current handling capabilities.

Feature Summary

NPN Darlington configuration for high current gain
High voltage capability up to 300 V
Robust 50 W power dissipation rating
Through-hole TO-220AB package for efficient thermal management

Applications

High-voltage switching circuits
Industrial motor control systems
Power supply output stages

Procurement Notes

Verify the specific manufacturer source when sourcing this component, as Renesas has acquired assets from other semiconductor companies like Fairchild Semiconductor. Ensure the datasheet matches the exact electrical characteristics and pinout for the 2SD991K variant intended for your design. Confirm RoHS compliance status if required for your region.

Selection Notes

Select this component for applications requiring high voltage isolation and substantial current drive in a single package. The Darlington structure provides high current gain, simplifying driver circuit requirements. Consider the TO-220AB package size and thermal resistance when designing heat dissipation solutions for continuous operation at high loads.

Part Context

The 2SD991K belongs to the class of high-power bipolar transistors. It is part of Renesas' portfolio of discrete semiconductors used in power electronics. This component serves as a fundamental building block for power amplification and switching tasks in industrial and consumer electronic equipment.