2SJ01630RL

2SJ01630RL

  • Description:JFET P-CH 20MA MINI3-G1
  • Series:-

SKU:dd28283a8b08 Category: Brand:

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Product Detailed Parameters

  • Description:JFET P-CH 20MA MINI3-G1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):600 µA @ 10 V
  • Current Drain (Id) - Max:20 mA
  • Voltage - Cutoff (VGS off) @ Id:1.5 V @ 10 µA
  • Input Capacitance (Ciss) (Max) @ Vds:12pF @ 10V
  • Resistance - RDS(On):300 Ohms
  • Power - Max:150 mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:Mini3-G1
  • Grade:-
  • Qualification:-

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2SJ01630RL

Overview

The Panasonic 2SJ01630RL is a silicon P-channel junction field-effect transistor designed for switching circuits. It operates with a maximum drain current of -20 mA and a power dissipation of 150 mW at 25°C ambient temperature. The device features a gate-drain voltage rating of 65 V and complies with the RoHS Directive (EU 2002/95/EC). Electrical characteristics include a typical forward transfer admittance of 2.5 mS at -1 mA drain current and a maximum drain-source ON resistance of 300 Ω. The component utilizes the Mini3-G1 package, which corresponds to the SC-59 form factor, and is marked with the symbol '4M'.

Feature Summary

  • Designed specifically for use in switching circuits.
  • Provides low ON resistance characteristics for efficient operation.
  • Exhibits low-noise performance suitable for sensitive signal paths.

Applications

  • General electronic equipment such as office machines and household appliances.
  • Communications equipment requiring small-signal switching capabilities.
  • Measuring instruments utilizing standard applications.

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm the current lifecycle status directly with Panasonic, as this product may be subject to maintenance or discontinuation phases. Ensure compliance with export control regulations if transferring technical data across borders. Request the latest Product Standards prior to final design implementation to validate specifications.

Selection Notes

Select this component for designs requiring a P-channel JFET with a 65 V gate-drain voltage limit. Ensure the application remains within the specified absolute maximum ratings, particularly regarding transient states during power-on or mode-switching. Consider the thermal constraints associated with the 150 mW power dissipation limit when designing heat management strategies for the Mini3-G1 package.

Part Context

This part belongs to the Panasonic Silicon Junction FETs (Small Signal) series. It serves as a complementary device to the 2SK1103 N-channel counterpart. The 2SJ0163 designation represents the conventional part number for this specific silicon P-channel junction FET configuration.

Replacement Considerations

Consult the official Panasonic semiconductor website for the most current information regarding replacement parts or alternative components. Verify compatibility with existing circuit parameters before substituting any other devices.

FAQ

What is the marking symbol on the 2SJ0163 package?

The marking symbol printed on the component body is '4M'.

Is the 2SJ0163 compliant with environmental directives?

Yes, the product complies with the RoHS Directive (EU 2002/95/EC).

What is the recommended operating environment for this device?

It is intended for standard applications or general electronic equipment, including office equipment, communications equipment, measuring instruments, and household appliances.

2SJ01630RL2SJ01630RL

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